JPH0575172B2 - - Google Patents
Info
- Publication number
- JPH0575172B2 JPH0575172B2 JP62171496A JP17149687A JPH0575172B2 JP H0575172 B2 JPH0575172 B2 JP H0575172B2 JP 62171496 A JP62171496 A JP 62171496A JP 17149687 A JP17149687 A JP 17149687A JP H0575172 B2 JPH0575172 B2 JP H0575172B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitter
- base
- mesh
- emitter region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62171496A JPS6414961A (en) | 1987-07-08 | 1987-07-08 | Mesh-emitter type transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62171496A JPS6414961A (en) | 1987-07-08 | 1987-07-08 | Mesh-emitter type transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6414961A JPS6414961A (en) | 1989-01-19 |
JPH0575172B2 true JPH0575172B2 (en]) | 1993-10-20 |
Family
ID=15924177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62171496A Granted JPS6414961A (en) | 1987-07-08 | 1987-07-08 | Mesh-emitter type transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6414961A (en]) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7439608B2 (en) * | 2006-09-22 | 2008-10-21 | Intel Corporation | Symmetric bipolar junction transistor design for deep sub-micron fabrication processes |
JP2014232883A (ja) * | 2014-07-28 | 2014-12-11 | ローム株式会社 | バイポーラ型半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5026480A (en]) * | 1973-07-09 | 1975-03-19 | ||
JPS5222885A (en) * | 1975-08-14 | 1977-02-21 | Matsushita Electronics Corp | Transistor and manufacturing system |
JPS62142356A (ja) * | 1985-12-17 | 1987-06-25 | Sanken Electric Co Ltd | トランジスタ |
-
1987
- 1987-07-08 JP JP62171496A patent/JPS6414961A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6414961A (en) | 1989-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4821095A (en) | Insulated gate semiconductor device with extra short grid and method of fabrication | |
US4495513A (en) | Bipolar transistor controlled by field effect by means of an isolated gate | |
US6462378B1 (en) | Power MOSFET with decreased body resistance under source region | |
JPH0766975B2 (ja) | 複合型ダイオード装置 | |
CA1130472A (en) | Semiconductor integrated circuit | |
JPH0575172B2 (en]) | ||
US6635926B2 (en) | Field effect transistor with high withstand voltage and low resistance | |
US6198154B1 (en) | PNP lateral bipolar electronic device | |
US4460913A (en) | Fast switching transistor | |
JP4810776B2 (ja) | 半導体装置 | |
JP2724204B2 (ja) | 導電変調型mosfet | |
JPS61187271A (ja) | ヘテロ接合型バイポ−ラトランジスタ | |
JP4779291B2 (ja) | 半導体素子 | |
JPH0551184B2 (en]) | ||
JPH0432754Y2 (en]) | ||
JPH05160409A (ja) | 半導体装置 | |
JP3253493B2 (ja) | 両面型半導体装置 | |
JP2024044491A (ja) | 半導体装置 | |
JPH02128474A (ja) | 電界効果トランジスタ | |
JP2604874B2 (ja) | 絶縁ゲート型バイポーラトランジスタ | |
JPH0442918Y2 (en]) | ||
JPH04180678A (ja) | ゲートターンオフサイリスタおよびその製造方法 | |
JPS61207066A (ja) | バイポ−ラトランジスタ | |
JPS6366430B2 (en]) | ||
JPH0474478A (ja) | ダイオード |